E3F-DS20 NPN or PNP output Photoelectric Sensor with 24 vdc /220vac
Working Principle
The core principle of a diffuse reflective photoelectric switch is that the sensor emits light, receives the echo after it is diffusely reflected by the target object, and triggers the switch signal based on the intensity of the echo.
Emission stage: The light-emitting element inside the sensor (usually an infrared LED or laser diode) emits a modulated beam of light (pulsed light).
Reflection stage: When the light beam irradiates the surface of the object being measured in front, the light undergoes diffuse reflection (i.e., scattering in all directions), and part of the reflected light returns to the sensor.
Reception and judgment: The photosensitive receiving element inside the sensor (such as a phototransistor) receives this reflected light.
When there is an object: The received light intensity exceeds the set threshold, and the sensor output signal flips (for example, from "off" to "on").
When there is no object: Insufficient reflected light returns, and the sensor maintains its initial state.
Product Features
1. Easy installation: Only one component needs to be installed, unlike through-beam types which require separate transmitter and receiver, or retro-reflective types which require a reflector.
2. Non-contact detection: Does not wear out the object being measured, suitable for fragile, soft, or high-temperature objects.
3. Fast response: Typically in the millisecond range (0.5ms - 2ms), suitable for high-speed assembly line counting.
4. Highly affected by object surface: Detection distance and stability strongly depend on the color, material, and surface roughness of the object.
5. White/bright surfaces: High reflectivity, long detection distance.
6. Black/rough/absorbent surfaces: Low reflectivity, short detection distance, and may even be undetectable.
Product detail
Technical Specifications
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Measuring method |
Diffuse reflection |
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model |
DC type |
NPN |
NO |
E3F-DS20C4 |
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NC |
E3F-DS20C2 or E3F-DS20B2 |
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NO+NC |
E3F-DS20C3 or E3F-DS20C12 |
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PNP |
NO |
E3F-DS20P1 |
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NO |
E3F-DS20P2 |
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NO+NC |
E3F-DS20P3 or E3F-DS20P12 |
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Two-wire |
NO |
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NC |
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AC type |
Two-wire |
NO |
E3F-DS20Y1 |
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NC |
E3F-DS20Y2 |
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Three-wire |
NO+NC |
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examination range |
20 ± 10% |
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Detection range adjustment |
Fixed or Adjustable regulator |
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Detection target |
Opaque object |
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Response time |
1ms |
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On delay |
1.5ms |
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light source |
Infrared light 660nm |
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voltage |
DC type: DC12-24V (6-36V) pulsation (P-P) below 10%, AC type: AC110-220V (90-250V) 50/60Hz |
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Withstand voltage |
AC1000V 50/60Hz 1min between the charging part and the outer casing |
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Voltage effect |
Rated power supply voltage range within ±15%, rated power supply voltage value, ±10% detection distance |
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Current consumption |
N.P type: 20mA or less, type A: 1.7mA or less |
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Control output |
N.P type: 300 mA or less, A type: 400 mA or less, J type: 2 A or less (contact life: 100,000 times) |
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Loop protection |
N.P.D type: reverse connection protection, surge absorption, load short circuit protection, type A: surge absorption |
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Ambient temperature and humidity |
During operation and storage: each -30-+65 °C (no ice, no condensation), During operation and storage: 35-95% RH each |
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Temperature effect |
Temperature range -30-+65°C, +23°C, ±15% detection distance |
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Insulation resistance |
50MΩ or more (DC500 megohmmeter) between the charging part and the outer casing |
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Material |
Housing: AB plastic Detection surface (lens): PMMA |
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Protective structure |
IP65 (IEC specification) can be customized IP67 |
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