E3S-GS30 U-shaped photoelectric switch sensor for object counting
Working Principle
The U-shaped photoelectric switch has a 'U' shaped structure, with an infrared LED (emitter) and a phototransistor or photodiode (receiver) installed on both sides. The infrared beam emitted by the emitter passes through the U-shaped slot to the receiver. When an object enters the U-shaped slot and blocks the light beam, the light intensity received by the receiver changes, causing a change in the internal circuit state and outputting the corresponding switch signal.
Product Features
1. Extremely easy installation with fixed optical path:
The biggest advantage is that no on-site alignment is required. Since the emitter and receiver are precisely fixed on both sides of the same housing at the factory and permanently aligned, the user only needs to attach the sensor to the device, completely eliminating the hassle of installing and adjusting through-beam switches. The detection optical path (i.e., the width and depth of the groove) is fixed and very stable.
2. High detection accuracy and fast response:
The small light spot is ideal for detecting small objects, edge positions, or marks (such as labels, holes, or teeth). The high response frequency allows it to be used for high-speed counting and rotational speed measurement.
3. Strong anti-interference ability: Similar to through-beam principle, it is only sensitive to its own emitted modulated light, showing strong resistance to ambient light interference.
4. Object detection characteristics: Like through-beam detection, as long as the object is opaque and can block the light path, it can be detected, regardless of color, material, or reflectivity. However, it still cannot reliably detect transparent or semi-transparent objects.
5. Limited detection forms: The object must fit into the U-shaped groove to be detected. It cannot be used for large or irregularly shaped objects. The detection distance (i.e., groove width) is fixed and cannot be adjusted.
Product detail
Technical Specifications
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Detection method |
Trough / U type |
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model |
DC type |
NPN |
NO |
E3S-GS30E4 |
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NC |
E3S-GS30E2 |
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NO+NC |
E3S-GS30E42 |
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PNP |
NO |
E3S-GS30P4 |
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NO |
E3S-GS30P2 |
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NO+NC |
E3S-GS30P42 |
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examination range |
30mm |
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Detection range adjustment |
Sensitivity adjuster |
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Detection target |
Opaque object |
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Response time |
1ms |
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On delay |
1.5ms |
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light source |
Infrared light 660nm |
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voltage |
DC type: DC12-24V (6-36V) pulsation (P-P) below 10%, AC type: AC110-220V (90-250V) 50/60Hz |
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Withstand voltage |
AC1000V 50/60Hz 1min between the charging part and the outer casing |
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Voltage effect |
Rated power supply voltage range within ±15%, rated power supply voltage value, ±10% detection distance |
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Current consumption |
N.P type: 20mA or less, type A: 1.7mA or less |
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Control output |
N.P type: 300 mA or less, A type: 400 mA or less, J type: 2 A or less (contact life: 100,000 times) |
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Loop protection |
N.P.D type: reverse connection protection, surge absorption, load short circuit protection, type A: surge absorption |
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Ambient temperature and humidity |
During operation and storage: each -30-+65 °C (no ice, no condensation), During operation and storage: 35-95% RH each |
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Temperature effect |
Temperature range -30-+65°C, +23°C, ±15% detection distance Temperature range -25 - +60 ° C, +23 ° C, ± 10% detection distance |
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Insulation resistance |
50MΩ or more (DC500 megohmmeter) between the charging part and the outer casing |
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Material |
Housing: ABS detection surface (lens): PMMA |
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Protective structure |
IP67 (IEC specification) |
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